中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The effect of hydrogen on copper nitride thin films deposited by magnetron sputtering

文献类型:期刊论文

作者Zhang GA(张广安); Chen JT(陈江涛)
刊名Applied Surface Science
出版日期2008
卷号254页码:5012-5015
关键词Copper nitride Thin films Hydrogen Structure Thermal properties
ISSN号0169-4332
通讯作者阎鹏勋
中文摘要Copper nitride thin films were deposited on Si (1 0 0) wafers by reactive magnetron sputtering at various H2/N2 ratios. X-ray diffraction measurements show that the films are composed of Cu3N crystallites with anti-ReO3 structure and exhibit preferred orientation of [1 0 0] direction. Although the relative composition of the films has obviously changes with the H2/N2 ratios, the orientations of the films keep almost no changes. However, the grain size, lattice parameter and composition of the films are strongly dependent on the H2/N2 ratios. The copper nitride films prepared at 10% H2/N2 ratios show poor stability and large weight gain compared to the copper nitride films prepared at 0% H2/N2 ratios.
学科主题材料科学与物理化学
收录类别SCI
资助信息Natural Science Foundation of China (Granted No 50772115)
语种英语
WOS记录号WOS:000255728500015
公开日期2013-03-28
源URL[http://210.77.64.217/handle/362003/2583]  
专题兰州化学物理研究所_固体润滑国家重点实验室
推荐引用方式
GB/T 7714
Zhang GA,Chen JT. The effect of hydrogen on copper nitride thin films deposited by magnetron sputtering[J]. Applied Surface Science,2008,254:5012-5015.
APA 张广安,&陈江涛.(2008).The effect of hydrogen on copper nitride thin films deposited by magnetron sputtering.Applied Surface Science,254,5012-5015.
MLA 张广安,et al."The effect of hydrogen on copper nitride thin films deposited by magnetron sputtering".Applied Surface Science 254(2008):5012-5015.

入库方式: OAI收割

来源:兰州化学物理研究所

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