中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Stress relief patterns of hydrogenated amorphous carbon films grown by dc-pulse plasma chemical vapor deposition

文献类型:期刊论文

作者Zhang JY(张俊彦)
刊名Applied Surface Science
出版日期2008
卷号255页码:1836-1840
关键词Amorphous carbon Stress Buckling Dc-pulse plasma chemical vapor deposition
ISSN号0169-4332
通讯作者贺德衍
中文摘要Hydrogenated amorphous carbon films were prepared on Si (1 0 0) substrates by dc-pulse plasma chemical vapor deposition. The nature of the deposited films was characterized by Raman spectra and the stress relief patterns were observed by scanning electron microscope. Besides the well-known sinusoidal type and flower type patterns, etc., two different stress relief patterns, ring type and peg-top shape with exiguous tine on the top, were observed. The ring type in this paper was a clear ridge-cracked buckle and unusual. Two competing buckle delamination morphologies ring and sinusoidal buckling coexist. The ridge-cracked buckle in ring type was narrower than the sinusoidal buckling. Meanwhile peg-top shape with exiguous tine on the top in this paper was unusual. These different patterns supported the approach in which the stress relief forms have been analyzed using the theory of plate buckling.
学科主题材料科学与物理化学
收录类别SCI
资助信息‘‘863’’ program (No. 2007AA03Z338) of Chinese Ministry of Science and Technology;‘‘Hundreds Talent Program’’ of Chinese Academy of Sciences
语种英语
公开日期2013-03-28
源URL[http://210.77.64.217/handle/362003/2584]  
专题兰州化学物理研究所_固体润滑国家重点实验室
推荐引用方式
GB/T 7714
Zhang JY. Stress relief patterns of hydrogenated amorphous carbon films grown by dc-pulse plasma chemical vapor deposition[J]. Applied Surface Science,2008,255:1836-1840.
APA 张俊彦.(2008).Stress relief patterns of hydrogenated amorphous carbon films grown by dc-pulse plasma chemical vapor deposition.Applied Surface Science,255,1836-1840.
MLA 张俊彦."Stress relief patterns of hydrogenated amorphous carbon films grown by dc-pulse plasma chemical vapor deposition".Applied Surface Science 255(2008):1836-1840.

入库方式: OAI收割

来源:兰州化学物理研究所

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