中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu3N film

文献类型:期刊论文

作者Fan XY(范晓彦) ; Wu ZG(吴志国) ; Yan PX(阎鹏勋) ; Geng BS(耿柏松) ; Li HJ(李华军) ; Li C(李春) ; Zhang PJ(张鹏举)
刊名Materials Letters
出版日期2008
卷号62页码:1805-1808
关键词Well-ordered CuO Nanowire arrays Cu3N film Direct oxidation
ISSN号0167-577X
通讯作者阎鹏勋
中文摘要Well-ordered CuO nanowire arrays were prepared through directly annealing the sputter-deposited Cu3N film at 300 ℃ for 90 min in atmosphere. The XRD and XPS results indicate that the Cu3N film completely changes to CuO without any other oxides such as after annealed. XPS results also indicate that there is also residual nitrogen in the CuO nanowire arrays. The FE-SEM and TEM images show that the CuO nanowire arrays are vertical to the substrate with a diameter of about 20 nm and a length of ∼0.6 μm. The growth mechanism is also discussed preliminarily.
学科主题材料科学与物理化学
收录类别SCI
语种英语
公开日期2013-03-28
源URL[http://210.77.64.217/handle/362003/2668]  
专题兰州化学物理研究所_固体润滑国家重点实验室
推荐引用方式
GB/T 7714
Fan XY,Wu ZG,Yan PX,et al. Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu3N film[J]. Materials Letters,2008,62:1805-1808.
APA 范晓彦.,吴志国.,阎鹏勋.,耿柏松.,李华军.,...&张鹏举.(2008).Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu3N film.Materials Letters,62,1805-1808.
MLA 范晓彦,et al."Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu3N film".Materials Letters 62(2008):1805-1808.

入库方式: OAI收割

来源:兰州化学物理研究所

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