中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Diode pumped passive Q switching of Yb3+-doped GdAl3(BO3)(4) nonlinear laser crystal

文献类型:期刊论文

作者A. Brenier ; C. Y. Tu ; Z. J. Zhu ; J. F. Li
刊名Applied Physics Letters
出版日期2007-02
卷号90期号:7
关键词spectroscopic properties microchip laser conversion garnets
ISSN号0003-6951
中文摘要The authors report the passive Q switching of a diode pumped Yb:GdAl3(BO3)(4) (Yb:GAB) laser. The slopes of the average output power are 25% and 39.5% under different experimental conditions. The repetition rates occur in the 1-4.5 kHz range and pulse energies of 125 and 165 mu J with about 30 ns duration are obtained. An experimental comparison with passively Q-switched Nd:GAB laser is provided. A theoretical analysis is performed. It is in reasonable agreement with the experimental data and it is shown to be a useful tool for predicting the optimization of the cavity parameters. (c) 2007 American Institute of Physics.
语种英语
公开日期2013-04-01
源URL[http://ir.fjirsm.ac.cn/handle/350002/6117]  
专题福建物质结构研究所_中科院福建物质结构研究所_期刊论文
推荐引用方式
GB/T 7714
A. Brenier,C. Y. Tu,Z. J. Zhu,et al. Diode pumped passive Q switching of Yb3+-doped GdAl3(BO3)(4) nonlinear laser crystal[J]. Applied Physics Letters,2007,90(7).
APA A. Brenier,C. Y. Tu,Z. J. Zhu,&J. F. Li.(2007).Diode pumped passive Q switching of Yb3+-doped GdAl3(BO3)(4) nonlinear laser crystal.Applied Physics Letters,90(7).
MLA A. Brenier,et al."Diode pumped passive Q switching of Yb3+-doped GdAl3(BO3)(4) nonlinear laser crystal".Applied Physics Letters 90.7(2007).

入库方式: OAI收割

来源:福建物质结构研究所

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