中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Synthesis, microstructure and photoluminescence of well-aligned ZnO nanorods on Si substrate

文献类型:期刊论文

作者L. Miao ; Y. Ieda ; S. Tanemura ; Y. G. Cao ; M. Tanemura ; Y. Hayashi ; S. Toh ; K. Kaneko
刊名Science and Technology of Advanced Materials
出版日期2007-09
卷号8期号:6页码:443-447
关键词nanostructure growth from vapour zinc compounds semiconducting materials physical vapor-deposition low-temperature growth nanowire arrays field-emission films
ISSN号1468-6996
中文摘要Well-aligned zinc oxide (ZnO) nanorods were densely grown on Si substrate using ZnO thin-film seed layer without any catalysts and/ or additives by a simple solid-vapour phase thermal sublimation technique. The growth mechanism can be interpreted as self-catalyst of zinc particles based on vapour-solid (VS) mechanism. High-resolution transmission electron microscopy (HRTEM) image and selected area electron diffraction (SAED) pattern confirmed that the single-crystalline growth of the nanorods were preferentially along c-axis of hexagonal crystal system. High-crystal quality ZnO nanorods with strong near band edge emission centred at 380 nm can be achieved on Si substrate by the introduction of sufficient oxygen during the nanorod growth processing. (c) 2007 NIMS and Elsevier Ltd. All rights reserved.
语种英语
公开日期2013-04-01
源URL[http://ir.fjirsm.ac.cn/handle/350002/6536]  
专题福建物质结构研究所_中科院福建物质结构研究所_期刊论文
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GB/T 7714
L. Miao,Y. Ieda,S. Tanemura,et al. Synthesis, microstructure and photoluminescence of well-aligned ZnO nanorods on Si substrate[J]. Science and Technology of Advanced Materials,2007,8(6):443-447.
APA L. Miao.,Y. Ieda.,S. Tanemura.,Y. G. Cao.,M. Tanemura.,...&K. Kaneko.(2007).Synthesis, microstructure and photoluminescence of well-aligned ZnO nanorods on Si substrate.Science and Technology of Advanced Materials,8(6),443-447.
MLA L. Miao,et al."Synthesis, microstructure and photoluminescence of well-aligned ZnO nanorods on Si substrate".Science and Technology of Advanced Materials 8.6(2007):443-447.

入库方式: OAI收割

来源:福建物质结构研究所

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