Reactive flux syntheses, crystal structures and band gaps of AInS(2) (A= Rb, Cs)
文献类型：期刊论文
| 作者 | H. Y. Zeng ; F. K. Zheng ; R. P. Chen ; Z. C. Dong ; G. C. Guo ; J. S. Huang |
| 刊名 | Journal of Alloys and Compounds
 |
| 出版日期 | 2007-04 |
| 卷号 | 432期号:1-2页码:69-73 |
| ISSN号 | 0925-8388 |
| 关键词 | flux crystal growth crystal structure band gap chalcogenides temperature rbins2 |
| 中文摘要 | High-quality single crystals of RbInS2, CsInS2 were isolated from the halide flux as a major phase of the repeated fusion of CaS and In2S3 followed by slow cooling. RbInS2 and CsInS2 are practically isostructural with KInS2. RbInS2: C2/c, a = 11.071(6) angstrom, b = 11.068(1) angstrom, c = 15.610(7) angstrom, beta = 100.36(3)degrees, V = 1882(2) angstrom(3), Z=16, d(x) = 3.74 g/cm(3), R = 6.38%, R-w = 6.42%. CsInS2: C2/c, a = 11.197(3) angstrom, b = 11. 158(3) angstrom, c = 16.358(4) angstrom, beta = 99.92(2)degrees, V = 2013(2) angstrom(3), Z = 16, d(x) = 4.12 g/cm(3), R = 5.60%, R-w = 6.20%. The AInS(2) (A = Rb, Cs) structure is characterized by double layers of vertex-sharing [ln(4)S(10)] units that each consists of four [InS4] polyhedra. The charge-balancing alkali-metal cations are stuffed into the channels created by the packing of these anionic [In4S10] blocks. The optical reflectance measurements show a band gap of 3.3 eV for RbInS2 and 3.4 eV for CsInS2, suggesting that both are semiconductors. (c) 2006 Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| 公开日期 | 2013-04-01 |
| 源URL | [http://ir.fjirsm.ac.cn/handle/350002/6855]  |
| 专题 | 福建物质结构研究所_中科院福建物质结构研究所_期刊论文 |
| 推荐引用方式 GB/T 7714 | H. Y. Zeng,F. K. Zheng,R. P. Chen,et al. Reactive flux syntheses, crystal structures and band gaps of AInS(2) (A= Rb, Cs)[J]. Journal of Alloys and Compounds,2007,432(1-2):69-73. |
| APA | H. Y. Zeng,F. K. Zheng,R. P. Chen,Z. C. Dong,G. C. Guo,&J. S. Huang.(2007).Reactive flux syntheses, crystal structures and band gaps of AInS(2) (A= Rb, Cs).Journal of Alloys and Compounds,432(1-2),69-73. |
| MLA | H. Y. Zeng,et al."Reactive flux syntheses, crystal structures and band gaps of AInS(2) (A= Rb, Cs)".Journal of Alloys and Compounds 432.1-2(2007):69-73. |
入库方式： OAI收割
来源：福建物质结构研究所
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