Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Wei W (Wei, Wei) ; Qin ZX (Qin, Zhixin) ; Fan SF (Fan, Shunfei) ; Li ZW (Li, Zhiwei) ; Shi K (Shi, Kai) ; Zhu QS (Zhu, Qinsheng) ; Zhang GY (Zhang, Guoyi) |
| 刊名 | nanoscale research letters
 |
| 出版日期 | 2012 |
| 卷号 | 7页码:562 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-04-18 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23880]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Wei W ,Qin ZX ,Fan SF ,et al. Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy[J]. nanoscale research letters,2012,7:562. |
| APA | Wei W .,Qin ZX .,Fan SF .,Li ZW .,Shi K .,...&Zhang GY .(2012).Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.nanoscale research letters,7,562. |
| MLA | Wei W ,et al."Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy".nanoscale research letters 7(2012):562. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。