Si delta doping inside InAs/GaAs quantum dots with different doping densities
文献类型：期刊论文
| 作者 | Wang, Ke-Fan ; Gu, Yongxian ; Yang, Xiaoguang ; Yang, Tao ; Wang, Zhanguo |
| 刊名 | journal of vacuum science and technology b: microelectronics and nanometer structures
 |
| 出版日期 | 2012 |
| 卷号 | 30期号:4页码:041808 |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2013-04-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23934]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang, Ke-Fan,Gu, Yongxian,Yang, Xiaoguang,et al. Si delta doping inside InAs/GaAs quantum dots with different doping densities[J]. journal of vacuum science and technology b: microelectronics and nanometer structures,2012,30(4):041808. |
| APA | Wang, Ke-Fan,Gu, Yongxian,Yang, Xiaoguang,Yang, Tao,&Wang, Zhanguo.(2012).Si delta doping inside InAs/GaAs quantum dots with different doping densities.journal of vacuum science and technology b: microelectronics and nanometer structures,30(4),041808. |
| MLA | Wang, Ke-Fan,et al."Si delta doping inside InAs/GaAs quantum dots with different doping densities".journal of vacuum science and technology b: microelectronics and nanometer structures 30.4(2012):041808. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。