中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates

文献类型:期刊论文

作者Dong, Lin ; Sun, Guosheng ; Zheng, Liu ; Liu, Xingfang ; Zhang, Feng ; Yan, Guoguo ; Zhao, Wanshun ; Wang, Lei ; Li, Xiguang ; Wang, Zhanguo
刊名journal of physics d: applied physics
出版日期2012
卷号45期号:24页码:245102
学科主题半导体材料
收录类别EI
语种英语
公开日期2013-04-22
源URL[http://ir.semi.ac.cn/handle/172111/23918]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Dong, Lin,Sun, Guosheng,Zheng, Liu,et al. Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates[J]. journal of physics d: applied physics,2012,45(24):245102.
APA Dong, Lin.,Sun, Guosheng.,Zheng, Liu.,Liu, Xingfang.,Zhang, Feng.,...&Wang, Zhanguo.(2012).Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates.journal of physics d: applied physics,45(24),245102.
MLA Dong, Lin,et al."Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates".journal of physics d: applied physics 45.24(2012):245102.

入库方式: OAI收割

来源:半导体研究所

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