Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC
文献类型：期刊论文
| 作者 | Zhao, Wanshun ; Sun, Guosheng ; Wu, Hailei ; Yan, Guoguo ; Zheng, Liu ; Dong, Lin ; Wang, Lei ; Liu, Xingfang ; Yang, Lijun |
| 刊名 | materials science forum
 |
| 出版日期 | 2012 |
| 卷号 | 717-720页码:105-108 |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2013-04-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23919]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhao, Wanshun,Sun, Guosheng,Wu, Hailei,et al. Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC[J]. materials science forum,2012,717-720:105-108. |
| APA | Zhao, Wanshun.,Sun, Guosheng.,Wu, Hailei.,Yan, Guoguo.,Zheng, Liu.,...&Yang, Lijun.(2012).Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC.materials science forum,717-720,105-108. |
| MLA | Zhao, Wanshun,et al."Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC".materials science forum 717-720(2012):105-108. |
入库方式： OAI收割
来源：半导体研究所
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