Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography
文献类型：期刊论文
| ; | |
| 作者 | Wei, Tongbo; Wu, Kui; Lan, Ding; Yan, Qingfeng; Chen, Yu; Du, Chengxiao; Wang, Junxi; Zeng, Yiping; Li, Jinmin |
| 刊名 | applied physics letters
 ; Applied Physics Letters
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 101期号:21页码:211111 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-04-22 ; 2013-04-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23929]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Wei, Tongbo,Wu, Kui,Lan, Ding,et al. Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography, Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography[J]. applied physics letters, Applied Physics Letters,2012, 2012,101, 101(21):211111, 211111. |
| APA | Wei, Tongbo.,Wu, Kui.,Lan, Ding.,Yan, Qingfeng.,Chen, Yu.,...&Li, Jinmin.(2012).Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography.applied physics letters,101(21),211111. |
| MLA | Wei, Tongbo,et al."Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography".applied physics letters 101.21(2012):211111. |
入库方式： OAI收割
来源：半导体研究所
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