The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes
文献类型：期刊论文
| 作者 | Qiao YB (Qiao, Yanbin) ; Feng SW (Feng, Shiwei) ; Xiong C (Xiong, Cong) ; Ma XY (Ma, Xiaoyu) ; Zhu H (Zhu, Hui) ; Guo CS (Guo, Chunsheng) ; Wei GH (Wei, Guanghua) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2012 |
| 卷号 | 112期号:11页码:113104 |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-04-18 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23884]  |
| 专题 | 半导体研究所_光电子器件国家工程中心 |
| 推荐引用方式 GB/T 7714 | Qiao YB ,Feng SW ,Xiong C ,et al. The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes[J]. journal of applied physics,2012,112(11):113104. |
| APA | Qiao YB .,Feng SW .,Xiong C .,Ma XY .,Zhu H .,...&Wei GH .(2012).The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes.journal of applied physics,112(11),113104. |
| MLA | Qiao YB ,et al."The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes".journal of applied physics 112.11(2012):113104. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。