Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots
文献类型：期刊论文
| ; | |
| 作者 | Wang, Lijuan; He, Jifang; Shang, Xiangjun; Li, Mifeng; Yu, Ying; Zha, Guowei; Ni, Haiqiao; Niu, Zhichuan |
| 刊名 | semiconductor science and technology
 ; Semiconductor Science and Technology
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 27期号:11页码:115010 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-04-19 ; 2013-04-19 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23897]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang, Lijuan,He, Jifang,Shang, Xiangjun,et al. Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots, Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots[J]. semiconductor science and technology, Semiconductor Science and Technology,2012, 2012,27, 27(11):115010, 115010. |
| APA | Wang, Lijuan.,He, Jifang.,Shang, Xiangjun.,Li, Mifeng.,Yu, Ying.,...&Niu, Zhichuan.(2012).Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots.semiconductor science and technology,27(11),115010. |
| MLA | Wang, Lijuan,et al."Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots".semiconductor science and technology 27.11(2012):115010. |
入库方式： OAI收割
来源：半导体研究所
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