Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2
文献类型：期刊论文
| ; | |
| 作者 | Tongay, Sefaattin; Zhou, Jian; Ataca, Can; Lo, Kelvin; Matthews, Tyler S; Li, Jingbo; Grossman, Jeffrey C; Wu, Junqiao |
| 刊名 | nano letters
 ; Nano Letters
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 12期号:11页码:5576-5580 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-04-23 ; 2013-04-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23936]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Tongay, Sefaattin,Zhou, Jian,Ataca, Can,et al. Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2, Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2[J]. nano letters, Nano Letters,2012, 2012,12, 12(11):5576-5580, 5576-5580. |
| APA | Tongay, Sefaattin.,Zhou, Jian.,Ataca, Can.,Lo, Kelvin.,Matthews, Tyler S.,...&Wu, Junqiao.(2012).Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2.nano letters,12(11),5576-5580. |
| MLA | Tongay, Sefaattin,et al."Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2".nano letters 12.11(2012):5576-5580. |
入库方式： OAI收割
来源：半导体研究所
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