中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process

文献类型:期刊论文

作者Yan, Wei ; Zhang, Renping ; Du, Yandong ; Han, Weihua ; Yang, Fuhua
刊名journal of semiconductors
出版日期2012
卷号33期号:6页码:064005
学科主题人工智能
收录类别EI
语种英语
公开日期2013-04-22
源URL[http://ir.semi.ac.cn/handle/172111/23932]  
专题半导体研究所_半导体集成技术工程研究中心
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GB/T 7714
Yan, Wei,Zhang, Renping,Du, Yandong,et al. Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process[J]. journal of semiconductors,2012,33(6):064005.
APA Yan, Wei,Zhang, Renping,Du, Yandong,Han, Weihua,&Yang, Fuhua.(2012).Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process.journal of semiconductors,33(6),064005.
MLA Yan, Wei,et al."Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process".journal of semiconductors 33.6(2012):064005.

入库方式: OAI收割

来源:半导体研究所

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