Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
文献类型：期刊论文
| 作者 | Le, L.C ; Zhao, D.G ; Jiang, D.S ; Zhang, S.M ; Yang, H ; Li, L ; Wu, L.L ; Chen, P ; Liu, Z.S ; Li, Z.C ; Fan, Y.M ; Zhu, J.J ; Wang, H |
| 刊名 | applied physics letters
 |
| 出版日期 | 2012 |
| 卷号 | 101期号:25页码:252110 |
| 学科主题 | 光电子学 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2013-04-19 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23899]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Le, L.C,Zhao, D.G,Jiang, D.S,et al. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes[J]. applied physics letters,2012,101(25):252110. |
| APA | Le, L.C.,Zhao, D.G.,Jiang, D.S.,Zhang, S.M.,Yang, H.,...&Wang, H.(2012).Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes.applied physics letters,101(25),252110. |
| MLA | Le, L.C,et al."Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes".applied physics letters 101.25(2012):252110. |
入库方式： OAI收割
来源：半导体研究所
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