Investigation on deep energy levels formed by sulphur implantation into silicon
文献类型：期刊论文
| 作者 | Gao, Li-Peng ; Han, Pei-De ; Mao, Xue ; Fan, Yu-Jie ; Hu, Shao-Xu |
| 刊名 | rengong jingti xuebao/journal of synthetic crystals
 |
| 出版日期 | 2012 |
| 卷号 | 41期号:suppl. 1页码:372-375 |
| 学科主题 | 光电子学 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2013-04-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23930]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Gao, Li-Peng,Han, Pei-De,Mao, Xue,et al. Investigation on deep energy levels formed by sulphur implantation into silicon[J]. rengong jingti xuebao/journal of synthetic crystals,2012,41(suppl. 1):372-375. |
| APA | Gao, Li-Peng,Han, Pei-De,Mao, Xue,Fan, Yu-Jie,&Hu, Shao-Xu.(2012).Investigation on deep energy levels formed by sulphur implantation into silicon.rengong jingti xuebao/journal of synthetic crystals,41(suppl. 1),372-375. |
| MLA | Gao, Li-Peng,et al."Investigation on deep energy levels formed by sulphur implantation into silicon".rengong jingti xuebao/journal of synthetic crystals 41.suppl. 1(2012):372-375. |
入库方式： OAI收割
来源：半导体研究所
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