A Tunnel Diode Body Contact Structure for High-Performance SOI MOSFETs
文献类型：期刊论文
| 作者 | Luo, JX ; Chen, J ; Wu, QQ ; Chai, Z ; Zhou, JH ; Yu, T ; Dong, YJ ; Li, L ; Liu, W ; Qiu, C ; Wang, X |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2012 |
| 卷号 | 59期号:1页码:101-107 |
| 关键词 | Body contact floating-body effects (FBEs) kink effect linear kink effect (LKE) partially depleted (PD) silicon-on-insulator (SOI) SOI MOSFETs tunnel diode tunnel diode body contact (TDBC) |
| ISSN号 | 0018-9383 |
| 通讯作者 | Luo, JX (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | A tunnel diode body contact (TDBC) silicon-on-insulator (SOI) MOSFET structure without floating-body effects (FBEs) is proposed and successfully demonstrated. The key idea of the proposed structure is that a tunnel diode is embedded in the source region, |
| 学科主题 | Engineering; Physics |
| 收录类别 | 2012SCI-252 |
| 原文出处 | 10.1109/TED.2011.2173201 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114734]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Luo, JX,Chen, J,Wu, QQ,et al. A Tunnel Diode Body Contact Structure for High-Performance SOI MOSFETs[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2012,59(1):101-107. |
| APA | Luo, JX.,Chen, J.,Wu, QQ.,Chai, Z.,Zhou, JH.,...&Wang, X.(2012).A Tunnel Diode Body Contact Structure for High-Performance SOI MOSFETs.IEEE TRANSACTIONS ON ELECTRON DEVICES,59(1),101-107. |
| MLA | Luo, JX,et al."A Tunnel Diode Body Contact Structure for High-Performance SOI MOSFETs".IEEE TRANSACTIONS ON ELECTRON DEVICES 59.1(2012):101-107. |
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