Ab initio study of antisite defective layered Ge2Sb2Te5
文献类型:期刊论文
作者 | Zhou, J ; Sun, ZM ; Pan, YC ; Song, ZT ; Ahuja, R |
刊名 | MATERIALS CHEMISTRY AND PHYSICS |
出版日期 | 2012 |
卷号 | 133期号:1页码:159-162 |
ISSN号 | 0254-0584 |
关键词 | Chalcogenides Ab initio calculations Defects Elastic properties |
通讯作者 | Sun, ZM (reprint author), Xiamen Univ, Coll Mat, Dept Mat Sci & Engn, 422 Siming S Rd, Xiamen 361005, Fujian, Peoples R China. |
中文摘要 | By means of ab initio calculations, we have investigated the antisite defects in layered Ge2Sb2Te5 (GST). Our results show that both Te-sb and Sb-Te antisite defective GST alloys are energetically favorable and mechanically stable. Furthermore, the presen |
学科主题 | Materials Science |
收录类别 | 2012SCI-160 |
原文出处 | 10.1016/j.matchemphys.2012.01.001 |
语种 | 英语 |
公开日期 | 2013-04-17 |
源URL | [http://ir.sim.ac.cn/handle/331004/114735] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Zhou, J,Sun, ZM,Pan, YC,et al. Ab initio study of antisite defective layered Ge2Sb2Te5[J]. MATERIALS CHEMISTRY AND PHYSICS,2012,133(1):159-162. |
APA | Zhou, J,Sun, ZM,Pan, YC,Song, ZT,&Ahuja, R.(2012).Ab initio study of antisite defective layered Ge2Sb2Te5.MATERIALS CHEMISTRY AND PHYSICS,133(1),159-162. |
MLA | Zhou, J,et al."Ab initio study of antisite defective layered Ge2Sb2Te5".MATERIALS CHEMISTRY AND PHYSICS 133.1(2012):159-162. |
入库方式: OAI收割
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