中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ab initio study of antisite defective layered Ge2Sb2Te5

文献类型:期刊论文

作者Zhou, J ; Sun, ZM ; Pan, YC ; Song, ZT ; Ahuja, R
刊名MATERIALS CHEMISTRY AND PHYSICS
出版日期2012
卷号133期号:1页码:159-162
ISSN号0254-0584
关键词Chalcogenides Ab initio calculations Defects Elastic properties
通讯作者Sun, ZM (reprint author), Xiamen Univ, Coll Mat, Dept Mat Sci & Engn, 422 Siming S Rd, Xiamen 361005, Fujian, Peoples R China.
中文摘要By means of ab initio calculations, we have investigated the antisite defects in layered Ge2Sb2Te5 (GST). Our results show that both Te-sb and Sb-Te antisite defective GST alloys are energetically favorable and mechanically stable. Furthermore, the presen
学科主题Materials Science
收录类别2012SCI-160
原文出处10.1016/j.matchemphys.2012.01.001
语种英语
公开日期2013-04-17
源URL[http://ir.sim.ac.cn/handle/331004/114735]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhou, J,Sun, ZM,Pan, YC,et al. Ab initio study of antisite defective layered Ge2Sb2Te5[J]. MATERIALS CHEMISTRY AND PHYSICS,2012,133(1):159-162.
APA Zhou, J,Sun, ZM,Pan, YC,Song, ZT,&Ahuja, R.(2012).Ab initio study of antisite defective layered Ge2Sb2Te5.MATERIALS CHEMISTRY AND PHYSICS,133(1),159-162.
MLA Zhou, J,et al."Ab initio study of antisite defective layered Ge2Sb2Te5".MATERIALS CHEMISTRY AND PHYSICS 133.1(2012):159-162.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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