Advantages of GeTeN material for phase change memory applications
文献类型：期刊论文
| 作者 | Peng, C ; Wu, LC ; Song, ZT ; Zhou, XL ; Zhu, M ; Rao, F ; Liu, B ; Feng, SL |
| 刊名 | JOURNAL OF NON-CRYSTALLINE SOLIDS
 |
| 出版日期 | 2012 |
| 卷号 | 358期号:17页码:2416-2419 |
| 关键词 | GeTeN Thin film Phase-change memory Band gap Interfacial performance |
| ISSN号 | 0022-3093 |
| 通讯作者 | Wu, LC (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | The nitrogen doped GeTe (GeTeN) thin film sputtered at a flow rate ratio (N-2/Ar) of 0.04, which proves to be outstanding in various properties comparing with GeTe, was investigated for the application of phase-change memory. The GeTeN film crystallizes i |
| 学科主题 | Materials Science |
| 收录类别 | 2012SCI-054 |
| 原文出处 | 10.1016/j.jnoncrysol.2011.10.026 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114736]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng, C,Wu, LC,Song, ZT,et al. Advantages of GeTeN material for phase change memory applications[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS,2012,358(17):2416-2419. |
| APA | Peng, C.,Wu, LC.,Song, ZT.,Zhou, XL.,Zhu, M.,...&Feng, SL.(2012).Advantages of GeTeN material for phase change memory applications.JOURNAL OF NON-CRYSTALLINE SOLIDS,358(17),2416-2419. |
| MLA | Peng, C,et al."Advantages of GeTeN material for phase change memory applications".JOURNAL OF NON-CRYSTALLINE SOLIDS 358.17(2012):2416-2419. |
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