An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell
文献类型：期刊论文
| 作者 | Cai, DL ; Chen, HP ; Wang, Q ; Chen, YF ; Song, ZT ; Wu, GP ; Feng, SL |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 33期号:9页码:1270-1272 |
| 关键词 | Complementary metal-oxide-semiconductor (CMOS) endurance phase-change random access memory (PCRAM) phase-change resistor resistor-on-via-stacked-plug (RVP) |
| ISSN号 | 0741-3106 |
| 通讯作者 | Cai, DL (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | In this letter, an 8-Mb phase-change random access memory (PCRAM) chip has been developed in a 130-nm 4-ML standard CMOS technology based on a Resistor-on-Via-stacked-. Plug (RVP) storage cell structure. This phase-change resistor is formed after CMOS log |
| 学科主题 | Engineering |
| 收录类别 | 2012SCI-058 |
| 原文出处 | 10.1109/LED.2012.2204952 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114738]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cai, DL,Chen, HP,Wang, Q,et al. An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell[J]. IEEE ELECTRON DEVICE LETTERS,2012,33(9):1270-1272. |
| APA | Cai, DL.,Chen, HP.,Wang, Q.,Chen, YF.,Song, ZT.,...&Feng, SL.(2012).An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell.IEEE ELECTRON DEVICE LETTERS,33(9),1270-1272. |
| MLA | Cai, DL,et al."An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell".IEEE ELECTRON DEVICE LETTERS 33.9(2012):1270-1272. |
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