中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Autonomously Controlled Homogenous Growth of Wafer-Sized High-Quality Graphene via a Smart Janus Substrate

文献类型:期刊论文

作者Wan, DY ; Lin, TQ ; Bi, H ; Huang, FQ ; Xie, XM ; Chen, IW ; Jiang, MH
刊名ADVANCED FUNCTIONAL MATERIALS
出版日期2012
卷号22期号:5页码:1033-1039
关键词graphene homogenous growth smart Janus substrate chemical vapor deposition
ISSN号1616-301X
通讯作者Wan, DY (reprint author), Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Mat Energy Convers, Shanghai 200050, Peoples R China.
中文摘要The work reports a new method for large-area growth of graphene films, which have been predicted to have novel and broad applications in the future. While chemical vapor deposition (CVD) is currently the preferred method, it suffers from a rather narrow p
学科主题Chemistry; Science & Technology - Other Topics; Materials Science; Physics
收录类别2012SCI-162
原文出处10.1002/adfm.201102560
语种英语
公开日期2013-04-17
源URL[http://ir.sim.ac.cn/handle/331004/114744]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Wan, DY,Lin, TQ,Bi, H,et al. Autonomously Controlled Homogenous Growth of Wafer-Sized High-Quality Graphene via a Smart Janus Substrate[J]. ADVANCED FUNCTIONAL MATERIALS,2012,22(5):1033-1039.
APA Wan, DY.,Lin, TQ.,Bi, H.,Huang, FQ.,Xie, XM.,...&Jiang, MH.(2012).Autonomously Controlled Homogenous Growth of Wafer-Sized High-Quality Graphene via a Smart Janus Substrate.ADVANCED FUNCTIONAL MATERIALS,22(5),1033-1039.
MLA Wan, DY,et al."Autonomously Controlled Homogenous Growth of Wafer-Sized High-Quality Graphene via a Smart Janus Substrate".ADVANCED FUNCTIONAL MATERIALS 22.5(2012):1033-1039.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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