Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
文献类型：期刊论文
| 作者 | Zhou, XL ; Wu, LC ; Song, ZT ; Rao, F ; Zhu, M ; Peng, C ; Yao, DN ; Song, SN ; Liu, B ; Feng, SL |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 101期号:14页码:142104 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Zhou, XL (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | Carbon-doped Ge2Sb2Te5 material is proposed for high-density phase-change memories. The carbon doping effects on electrical and structural properties of Ge2Sb2Te5 are studied by in situ resistance and x-ray diffraction measurements as well as optical spec |
| 学科主题 | Physics |
| 收录类别 | 2012SCI-036 |
| 原文出处 | 10.1063/1.4757137 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114745]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhou, XL,Wu, LC,Song, ZT,et al. Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application[J]. APPLIED PHYSICS LETTERS,2012,101(14):142104. |
| APA | Zhou, XL.,Wu, LC.,Song, ZT.,Rao, F.,Zhu, M.,...&Feng, SL.(2012).Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application.APPLIED PHYSICS LETTERS,101(14),142104. |
| MLA | Zhou, XL,et al."Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application".APPLIED PHYSICS LETTERS 101.14(2012):142104. |
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