Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT
文献类型：期刊论文
| 作者 | Zhou, SL ; Wan-Chun, Y ; Hong-Liang, R ; Jia, L |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2012 |
| 卷号 | 61期号:12页码:128501 |
| 关键词 | InAlAs/GaSbAs InP/GaSbAs II-type DHBT |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhou, SL (reprint author), Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310023, Peoples R China. |
| 中文摘要 | The characteristics of a double heterojunction bipolar transistor(DHBT) depend closely on the type of band alignment structure at the hetero-interface between emitter-base(E-B) heterojunction and base-collector(B-C) heterojunction. Based on thermionic-fie |
| 学科主题 | Physics |
| 语种 | 中文 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114752]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhou, SL,Wan-Chun, Y,Hong-Liang, R,et al. Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT[J]. ACTA PHYSICA SINICA,2012,61(12):128501. |
| APA | Zhou, SL,Wan-Chun, Y,Hong-Liang, R,&Jia, L.(2012).Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT.ACTA PHYSICA SINICA,61(12),128501. |
| MLA | Zhou, SL,et al."Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT".ACTA PHYSICA SINICA 61.12(2012):128501. |
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