Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template
文献类型：期刊论文
| 作者 | Huang, SH ; Li, C ; Zhou, ZW ; Chen, CZ ; Zheng, YY ; Huang, W ; Lai, HK ; Chen, SY |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2012 |
| 卷号 | 520期号:6页码:2307-2310 |
| 关键词 | Ge-on-Si Dislocation density Ge coalescence island template |
| ISSN号 | 0040-6090 |
| 通讯作者 | Li, C (reprint author), Xiamen Univ, Semicond Photon Res Ctr, Dept Phys, Xiamen 361005, Fujian, Peoples R China. |
| 中文摘要 | Ge epilayer with low dislocation density is prepared on a low temperature self-patterned Ge coalescence island template on Si substrate by ultra-high vacuum chemical vapor deposition. The depth profile of dislocation density in the Ge epilayer measured by |
| 学科主题 | Materials Science; Physics |
| 收录类别 | 2012SCI-243 |
| 原文出处 | 10.1016/j.tsf.2011.09.023 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114755]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang, SH,Li, C,Zhou, ZW,et al. Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template[J]. THIN SOLID FILMS,2012,520(6):2307-2310. |
| APA | Huang, SH.,Li, C.,Zhou, ZW.,Chen, CZ.,Zheng, YY.,...&Chen, SY.(2012).Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template.THIN SOLID FILMS,520(6),2307-2310. |
| MLA | Huang, SH,et al."Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template".THIN SOLID FILMS 520.6(2012):2307-2310. |
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