Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications
文献类型：期刊论文
| 作者 | Bi, H ; Sun, SR ; Huang, FQ ; Xie, XM ; Jiang, MH |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY
 |
| 出版日期 | 2012 |
| 卷号 | 22期号:2页码:411-416 |
| ISSN号 | 0959-9428 |
| 通讯作者 | Huang, FQ (reprint author), Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China. |
| 中文摘要 | We first demonstrate the use of few layer graphene films directly grown on SiO2 substrates obtained by ambient pressure chemical vapor deposition (APCVD) as counter electrodes in dye-sensitized solar cells (DSSCs). The layer number and crystal size of gra |
| 学科主题 | Chemistry; Materials Science |
| 原文出处 | 10.1039/c1jm14778a |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114758]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Bi, H,Sun, SR,Huang, FQ,et al. Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications[J]. JOURNAL OF MATERIALS CHEMISTRY,2012,22(2):411-416. |
| APA | Bi, H,Sun, SR,Huang, FQ,Xie, XM,&Jiang, MH.(2012).Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications.JOURNAL OF MATERIALS CHEMISTRY,22(2),411-416. |
| MLA | Bi, H,et al."Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications".JOURNAL OF MATERIALS CHEMISTRY 22.2(2012):411-416. |
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