Direct Tunneling and Storage of Electrons in Ni Nanocrystals Embedded within MOS Structure
文献类型：期刊论文
| 作者 | Ni, HN ; Wu, LC ; Song, ZT ; Hui, C |
| 刊名 | RARE METAL MATERIALS AND ENGINEERING
 |
| 出版日期 | 2012 |
| 卷号 | 41期号:1页码:1-4 |
| 关键词 | nanocrystal memory Ni NCs MOS structure charge storage properties |
| ISSN号 | 1002-185X |
| 通讯作者 | Ni, HN (reprint author), Shaoxing Univ, Shanghai Jiao Tong Univ, Res Inst Micro Nano Sci & Technol, Dept Phys, Shaoxing 312000, Peoples R China. |
| 中文摘要 | Recently, nanocrystal nonvolatile memory (NVM) devices using nanocrystals (NCs) have attracted great research interest. In this work, we investigated the feasibility of Ni nanocrystals embedded in metal oxide semiconductor (MOS) capacitor structure for NV |
| 学科主题 | Materials Science; Metallurgy & Metallurgical Engineering |
| 收录类别 | 2012SCI-240 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114759]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ni, HN,Wu, LC,Song, ZT,et al. Direct Tunneling and Storage of Electrons in Ni Nanocrystals Embedded within MOS Structure[J]. RARE METAL MATERIALS AND ENGINEERING,2012,41(1):1-4. |
| APA | Ni, HN,Wu, LC,Song, ZT,&Hui, C.(2012).Direct Tunneling and Storage of Electrons in Ni Nanocrystals Embedded within MOS Structure.RARE METAL MATERIALS AND ENGINEERING,41(1),1-4. |
| MLA | Ni, HN,et al."Direct Tunneling and Storage of Electrons in Ni Nanocrystals Embedded within MOS Structure".RARE METAL MATERIALS AND ENGINEERING 41.1(2012):1-4. |
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