Disorder dependence of helical edge states in HgTe/CdTe quantum wells
文献类型:期刊论文
作者 | Chen, L ; Liu, Q ; Lin, XL ; Zhang, XG ; Jiang, XY |
刊名 | NEW JOURNAL OF PHYSICS
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出版日期 | 2012 |
卷号 | 14页码:43028 |
ISSN号 | 1367-2630 |
通讯作者 | Liu, Q (reprint author), CAS, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
中文摘要 | In recent years, extensive attention has been focused on a new topological phase induced by nonmagnetic disorder, known as the topological Anderson insulator (TAI). In this work, we study the disorder strength dependence of the edge states in TAI phase in |
学科主题 | Physics |
收录类别 | 2012SCI-137 |
原文出处 | 10.1088/1367-2630/14/4/043028 |
语种 | 英语 |
公开日期 | 2013-04-17 |
源URL | [http://ir.sim.ac.cn/handle/331004/114760] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Chen, L,Liu, Q,Lin, XL,et al. Disorder dependence of helical edge states in HgTe/CdTe quantum wells[J]. NEW JOURNAL OF PHYSICS,2012,14:43028. |
APA | Chen, L,Liu, Q,Lin, XL,Zhang, XG,&Jiang, XY.(2012).Disorder dependence of helical edge states in HgTe/CdTe quantum wells.NEW JOURNAL OF PHYSICS,14,43028. |
MLA | Chen, L,et al."Disorder dependence of helical edge states in HgTe/CdTe quantum wells".NEW JOURNAL OF PHYSICS 14(2012):43028. |
入库方式: OAI收割
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