中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Disorder dependence of helical edge states in HgTe/CdTe quantum wells

文献类型:期刊论文

作者Chen, L ; Liu, Q ; Lin, XL ; Zhang, XG ; Jiang, XY
刊名NEW JOURNAL OF PHYSICS
出版日期2012
卷号14页码:43028
ISSN号1367-2630
通讯作者Liu, Q (reprint author), CAS, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
中文摘要In recent years, extensive attention has been focused on a new topological phase induced by nonmagnetic disorder, known as the topological Anderson insulator (TAI). In this work, we study the disorder strength dependence of the edge states in TAI phase in
学科主题Physics
收录类别2012SCI-137
原文出处10.1088/1367-2630/14/4/043028
语种英语
公开日期2013-04-17
源URL[http://ir.sim.ac.cn/handle/331004/114760]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Chen, L,Liu, Q,Lin, XL,et al. Disorder dependence of helical edge states in HgTe/CdTe quantum wells[J]. NEW JOURNAL OF PHYSICS,2012,14:43028.
APA Chen, L,Liu, Q,Lin, XL,Zhang, XG,&Jiang, XY.(2012).Disorder dependence of helical edge states in HgTe/CdTe quantum wells.NEW JOURNAL OF PHYSICS,14,43028.
MLA Chen, L,et al."Disorder dependence of helical edge states in HgTe/CdTe quantum wells".NEW JOURNAL OF PHYSICS 14(2012):43028.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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