中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of voltage source internal resistance on the SQUID bootstrap circuit

文献类型:期刊论文

作者Dong, H ; Zhang, GF ; Wang, YL ; Zhang, Y ; Xie, XM ; Krause, HJ ; Braginski, AI ; Offenhausser, A
刊名SUPERCONDUCTOR SCIENCE & TECHNOLOGY
出版日期2012
卷号25期号:1页码:15012
ISSN号0953-2048
通讯作者Xie, XM (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
中文摘要The voltage-biased SQUID bootstrap circuit (SBC) is suitable for achieving simple and low-noise direct readout of dc SQUIDs. In practice, an ideal voltage bias is difficult to realize because of non-zero internal resistance R(in) of the bias voltage sourc
学科主题Physics
收录类别2012SCI-256
原文出处10.1088/0953-2048/25/1/015012
语种英语
公开日期2013-04-17
源URL[http://ir.sim.ac.cn/handle/331004/114763]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Dong, H,Zhang, GF,Wang, YL,et al. Effect of voltage source internal resistance on the SQUID bootstrap circuit[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY,2012,25(1):15012.
APA Dong, H.,Zhang, GF.,Wang, YL.,Zhang, Y.,Xie, XM.,...&Offenhausser, A.(2012).Effect of voltage source internal resistance on the SQUID bootstrap circuit.SUPERCONDUCTOR SCIENCE & TECHNOLOGY,25(1),15012.
MLA Dong, H,et al."Effect of voltage source internal resistance on the SQUID bootstrap circuit".SUPERCONDUCTOR SCIENCE & TECHNOLOGY 25.1(2012):15012.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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