Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories
文献类型：期刊论文
| 作者 | Wu, QQ ; Chen, J ; Lu, ZC ; Zhou, ZM ; Luo, JX ; Chai, Z ; Yu, T ; Qiu, C ; Li, L ; Pang, A ; Wang, X ; Fossum, JG |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 33期号:6页码:743-745 |
| 关键词 | Capacitorless DRAM overlap SOI floating-body cell (FBC) tunneling field-effect transistor (T-FET) underlap |
| ISSN号 | 0741-3106 |
| 通讯作者 | Wu, QQ (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | A capacitorless DRAM cell, floating-body/gate cell (FBGC), is experimentally presented with planar partially depleted SOI CMOS technology. The specially designed gate/drain underlap and gate/source overlap of the first transistor enable long worst case re |
| 学科主题 | Engineering |
| 收录类别 | 2012SCI-108 |
| 原文出处 | 10.1109/LED.2012.2190031 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114767]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, QQ,Chen, J,Lu, ZC,et al. Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories[J]. IEEE ELECTRON DEVICE LETTERS,2012,33(6):743-745. |
| APA | Wu, QQ.,Chen, J.,Lu, ZC.,Zhou, ZM.,Luo, JX.,...&Fossum, JG.(2012).Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories.IEEE ELECTRON DEVICE LETTERS,33(6),743-745. |
| MLA | Wu, QQ,et al."Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories".IEEE ELECTRON DEVICE LETTERS 33.6(2012):743-745. |
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