Extended-wavelength 640 x 1 linear InGaAs detector arrays using N-on-P configuration for back illumination
文献类型:期刊论文
作者 | Zhu, YM ; Li, YF ; Li, X ; Tang, HJ ; Shao, XM ; Chen, Y ; Deng, HH ; Wei, P ; Zhang, YG ; Gong, HM |
刊名 | JOURNAL OF INFRARED AND MILLIMETER WAVES
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出版日期 | 2012 |
卷号 | 31期号:1页码:11-+ |
关键词 | N-on-P configuration ICP etching linear detector array photoelectric characteristics |
ISSN号 | 1001-9014 |
通讯作者 | Zhu, YM (reprint author), Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Transducer Technol, Shanghai 200083, Peoples R China. |
中文摘要 | Back-illuminated 640 x 1 linear InGaAs detector arrays were fabricated on the In0.78Al0.22As/In0.78Ga0.22 As material of N-on-P configuration by the inductively coupled plasma (ICP) etching. The photoelectric characteristics of the detector were investiga |
学科主题 | Optics |
收录类别 | 2012SCI-203 |
语种 | 中文 |
公开日期 | 2013-04-17 |
源URL | [http://ir.sim.ac.cn/handle/331004/114769] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Zhu, YM,Li, YF,Li, X,et al. Extended-wavelength 640 x 1 linear InGaAs detector arrays using N-on-P configuration for back illumination[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2012,31(1):11-+. |
APA | Zhu, YM.,Li, YF.,Li, X.,Tang, HJ.,Shao, XM.,...&Gong, HM.(2012).Extended-wavelength 640 x 1 linear InGaAs detector arrays using N-on-P configuration for back illumination.JOURNAL OF INFRARED AND MILLIMETER WAVES,31(1),11-+. |
MLA | Zhu, YM,et al."Extended-wavelength 640 x 1 linear InGaAs detector arrays using N-on-P configuration for back illumination".JOURNAL OF INFRARED AND MILLIMETER WAVES 31.1(2012):11-+. |
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