中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Extended-wavelength 640 x 1 linear InGaAs detector arrays using N-on-P configuration for back illumination

文献类型:期刊论文

作者Zhu, YM ; Li, YF ; Li, X ; Tang, HJ ; Shao, XM ; Chen, Y ; Deng, HH ; Wei, P ; Zhang, YG ; Gong, HM
刊名JOURNAL OF INFRARED AND MILLIMETER WAVES
出版日期2012
卷号31期号:1页码:11-+
关键词N-on-P configuration ICP etching linear detector array photoelectric characteristics
ISSN号1001-9014
通讯作者Zhu, YM (reprint author), Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Transducer Technol, Shanghai 200083, Peoples R China.
中文摘要Back-illuminated 640 x 1 linear InGaAs detector arrays were fabricated on the In0.78Al0.22As/In0.78Ga0.22 As material of N-on-P configuration by the inductively coupled plasma (ICP) etching. The photoelectric characteristics of the detector were investiga
学科主题Optics
收录类别2012SCI-203
语种中文
公开日期2013-04-17
源URL[http://ir.sim.ac.cn/handle/331004/114769]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhu, YM,Li, YF,Li, X,et al. Extended-wavelength 640 x 1 linear InGaAs detector arrays using N-on-P configuration for back illumination[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2012,31(1):11-+.
APA Zhu, YM.,Li, YF.,Li, X.,Tang, HJ.,Shao, XM.,...&Gong, HM.(2012).Extended-wavelength 640 x 1 linear InGaAs detector arrays using N-on-P configuration for back illumination.JOURNAL OF INFRARED AND MILLIMETER WAVES,31(1),11-+.
MLA Zhu, YM,et al."Extended-wavelength 640 x 1 linear InGaAs detector arrays using N-on-P configuration for back illumination".JOURNAL OF INFRARED AND MILLIMETER WAVES 31.1(2012):11-+.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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