Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs
文献类型：期刊论文
| 作者 | Chen, J ; Luo, JX ; Wu, QQ ; Chai, Z ; Huang, XL ; Wei, X ; Wang, X |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2012 |
| 卷号 | 272页码:128-131 |
| 关键词 | Partially depleted SOI Floating-body effect The kink effect Esaki tunnel Junction Body contact |
| ISSN号 | 0168-583X |
| 通讯作者 | Chen, J (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | Silicon-on-insulate (SOI) MOSFETs offer benefits over bulk competitors for fully isolation and smaller junction capacitance. The performance of partially depleted (PD) SOI MOSFETs, though, is not good enough. Since the body is floating, the extra holes (f |
| 学科主题 | Instruments & Instrumentation; Nuclear Science & Technology; Physics |
| 收录类别 | 2012SCI-195 |
| 原文出处 | 10.1016/j.nimb.2011.01.048 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114770]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, J,Luo, JX,Wu, QQ,et al. Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2012,272:128-131. |
| APA | Chen, J.,Luo, JX.,Wu, QQ.,Chai, Z.,Huang, XL.,...&Wang, X.(2012).Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,272,128-131. |
| MLA | Chen, J,et al."Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 272(2012):128-131. |
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