Fabrication of high quality strained SiGe on Si substrate by RPCVD
文献类型：期刊论文
| 作者 | Xue, ZY ; Chen, D ; Liu, LJ ; Jiang, HT ; Bian, JT ; Wei, X ; Di, ZF ; Zhang, M ; Wang, X |
| 刊名 | CHINESE SCIENCE BULLETIN
 |
| 出版日期 | 2012 |
| 卷号 | 57期号:15页码:1862-1867 |
| 关键词 | SiGe epitaxial growth growth rate Ge content |
| ISSN号 | 1001-6538 |
| 通讯作者 | Xue, ZY (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | In this study, the growth kinetics of SiGe in a reduced pressure chemical vapor deposition system using dichlorosilane (SiH2Cl2) and germane (GeH4) as the Si and Ge precursors were investigated. The SiGe growth rate and Ge content were found to depend on |
| 学科主题 | Science & Technology - Other Topics |
| 收录类别 | 2012SCI-130 |
| 原文出处 | 10.1007/s11434-012-5020-7 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114771]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xue, ZY,Chen, D,Liu, LJ,et al. Fabrication of high quality strained SiGe on Si substrate by RPCVD[J]. CHINESE SCIENCE BULLETIN,2012,57(15):1862-1867. |
| APA | Xue, ZY.,Chen, D.,Liu, LJ.,Jiang, HT.,Bian, JT.,...&Wang, X.(2012).Fabrication of high quality strained SiGe on Si substrate by RPCVD.CHINESE SCIENCE BULLETIN,57(15),1862-1867. |
| MLA | Xue, ZY,et al."Fabrication of high quality strained SiGe on Si substrate by RPCVD".CHINESE SCIENCE BULLETIN 57.15(2012):1862-1867. |
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