Germanium Nitride as a Buffer Layer for Phase Change Memory
文献类型：期刊论文
| 作者 | Zhang, X ; Liu, B ; Peng, C ; Rao, F ; Zhou, XL ; Song, SN ; Wang, LY ; Cheng, Y ; Wu, LC ; Yao, DN ; Song, ZT ; Feng, SL |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 29期号:10页码:107201 |
| ISSN号 | 0256-307X |
| 通讯作者 | Liu, B (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. |
| 中文摘要 | The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented. It is found that the adhesive strength between the Ge2Sb2Te5(GST) layer and the layer below could be increased at least 20 times, which i |
| 学科主题 | Physics |
| 收录类别 | 2012SCI-034 |
| 原文出处 | 10.1088/0256-307X/29/10/107201 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114775]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, X,Liu, B,Peng, C,et al. Germanium Nitride as a Buffer Layer for Phase Change Memory[J]. CHINESE PHYSICS LETTERS,2012,29(10):107201. |
| APA | Zhang, X.,Liu, B.,Peng, C.,Rao, F.,Zhou, XL.,...&Feng, SL.(2012).Germanium Nitride as a Buffer Layer for Phase Change Memory.CHINESE PHYSICS LETTERS,29(10),107201. |
| MLA | Zhang, X,et al."Germanium Nitride as a Buffer Layer for Phase Change Memory".CHINESE PHYSICS LETTERS 29.10(2012):107201. |
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