High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material
文献类型：期刊论文
| 作者 | Xu, JA ; Rao, F ; Song, ZT ; Xia, MJ ; Peng, C ; Gu, YF ; Zhu, M ; Wu, LC ; Liu, B ; Feng, SL |
| 刊名 | ELECTROCHEMICAL AND SOLID STATE LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 15期号:3页码:H59-H61 |
| ISSN号 | 1099-0062 |
| 通讯作者 | Xu, JA (reprint author), Shanghai Jiao Tong Univ, Inst Micro Nano Sci & Technol, Key Lab Thin Film & Microfabricat Technol, Natl Key Lab Micro Nano Fabricat Technol,Minist E, Shanghai 200240, Peoples R China. |
| 中文摘要 | SnTe-doped Ge2Sb2Te5 material is proposed to increase the phase change speed. The reversible phase change can be achieved by a voltage pulse as short as 30ns. Laser-induced crystallization speed is accelerated due to SnTe incorporation. SnTe plays a same |
| 学科主题 | Electrochemistry; Materials Science |
| 收录类别 | 2012SCI-259 |
| 原文出处 | 10.1149/2.006203esl |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114778]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, JA,Rao, F,Song, ZT,et al. High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2012,15(3):H59-H61. |
| APA | Xu, JA.,Rao, F.,Song, ZT.,Xia, MJ.,Peng, C.,...&Feng, SL.(2012).High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material.ELECTROCHEMICAL AND SOLID STATE LETTERS,15(3),H59-H61. |
| MLA | Xu, JA,et al."High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material".ELECTROCHEMICAL AND SOLID STATE LETTERS 15.3(2012):H59-H61. |
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