Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI
文献类型：期刊论文
| 作者 | Yu, W ; Zhang, B ; Zhao, QT ; Buca, D ; Hartmann, JM ; Luptak, R ; Mussler, G ; Fox, A ; Bourdelle, KK ; Wang, X ; Mantl, S |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 33期号:6页码:758-760 |
| 关键词 | Hole mobility quantum well (QW) SiGe strained Si (sSi) |
| ISSN号 | 0741-3106 |
| 通讯作者 | Yu, W (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. |
| 中文摘要 | Hole mobilities of quantum-well p-MOSFETs on strained Si (sSi)/Si0.5Ge0.5/strained SOI (sSOI) and Si/Si0.5Ge0.5/SOI heterostructure substrates are investigated as a function of temperature. Ge interdiffusion during annealing in highly strained Si0.5Ge0.5 |
| 学科主题 | Engineering |
| 收录类别 | 2012SCI-109 |
| 原文出处 | 10.1109/LED.2012.2190035 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114780]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, W,Zhang, B,Zhao, QT,et al. Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI[J]. IEEE ELECTRON DEVICE LETTERS,2012,33(6):758-760. |
| APA | Yu, W.,Zhang, B.,Zhao, QT.,Buca, D.,Hartmann, JM.,...&Mantl, S.(2012).Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI.IEEE ELECTRON DEVICE LETTERS,33(6),758-760. |
| MLA | Yu, W,et al."Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI".IEEE ELECTRON DEVICE LETTERS 33.6(2012):758-760. |
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