Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs
文献类型：期刊论文
| 作者 | Luo, JX ; Chen, J ; Zhou, JH ; Wu, QQ ; Chai, Z ; Yu, T ; Wang, X |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2012 |
| 卷号 | 21期号:5页码:56602 |
| 关键词 | floating body effect hysteresis effect back gate bias partially depleted (PD) SOI |
| ISSN号 | 1674-1056 |
| 通讯作者 | Chen, J (reprint author), Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I-D hysteresis has been developed to clarify the |
| 学科主题 | Physics |
| 收录类别 | 2012SCI-129 |
| 原文出处 | 10.1088/1674-1056/21/5/056602 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114782]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Luo, JX,Chen, J,Zhou, JH,et al. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs[J]. CHINESE PHYSICS B,2012,21(5):56602. |
| APA | Luo, JX.,Chen, J.,Zhou, JH.,Wu, QQ.,Chai, Z.,...&Wang, X.(2012).Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs.CHINESE PHYSICS B,21(5),56602. |
| MLA | Luo, JX,et al."Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs".CHINESE PHYSICS B 21.5(2012):56602. |
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