Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application
文献类型：期刊论文
| 作者 | Cheng, LM ; Wu, LC ; Song, ZT ; Rao, F ; Peng, C ; Yao, DN ; Liu, B |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 71页码:98-100 |
| 关键词 | Phase-change memory Activation energy Electrical properties Phase transformation |
| ISSN号 | 0167-577X |
| 通讯作者 | Cheng, LM (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | The thermal and electrical-property changes of 2.02 at.% nitrogen-doped Ge-rich Ge3Sb2Te5 (NGST) were investigated. The crystallization temperature was 180 degrees C. The corresponding activation energy was 2.96 eV. The maximum temperature for a 10 year d |
| 学科主题 | Materials Science; Physics |
| 收录类别 | 2012SCI-161 |
| 原文出处 | 10.1016/j.matlet.2011.12.039 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114784]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cheng, LM,Wu, LC,Song, ZT,et al. Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application[J]. MATERIALS LETTERS,2012,71:98-100. |
| APA | Cheng, LM.,Wu, LC.,Song, ZT.,Rao, F.,Peng, C.,...&Liu, B.(2012).Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application.MATERIALS LETTERS,71,98-100. |
| MLA | Cheng, LM,et al."Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application".MATERIALS LETTERS 71(2012):98-100. |
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