Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer
文献类型：期刊论文
| 作者 | Bi, DW ; Zhang, ZX ; Chen, M ; Wu, AM ; Wei, X ; Wang, X |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2012 |
| 卷号 | 272页码:257-260 |
| 关键词 | SOI Ion implantation Si nanocrystal Pseudo-MOS |
| ISSN号 | 0168-583X |
| 通讯作者 | Bi, DW (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China. |
| 中文摘要 | The radiation and electrical properties of Fully-Depleted (FD) SOI wafers hardened through the implantation of Si ions were provided in this study. The results showed that the Si nanocrystal created through ion implantation could significantly improve the |
| 学科主题 | Instruments & Instrumentation; Nuclear Science & Technology; Physics |
| 收录类别 | 2012SCI-196 |
| 原文出处 | 10.1016/j.nimb.2011.01.078 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114789]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Bi, DW,Zhang, ZX,Chen, M,et al. Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2012,272:257-260. |
| APA | Bi, DW,Zhang, ZX,Chen, M,Wu, AM,Wei, X,&Wang, X.(2012).Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,272,257-260. |
| MLA | Bi, DW,et al."Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 272(2012):257-260. |
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