Interface dipole engineering in metal gate/high-k stacks
文献类型：期刊论文
| 作者 | Huang, AP ; Zheng, XH ; Xiao, ZS ; Wang, M ; Di, ZF ; Chu, PK |
| 刊名 | CHINESE SCIENCE BULLETIN
 |
| 出版日期 | 2012 |
| 卷号 | 57期号:22页码:2872-2878 |
| 关键词 | high-k dielectrics metal gate interface dipole MOS stack effective work function |
| ISSN号 | 1001-6538 |
| 通讯作者 | Huang, AP (reprint author), Beihang Univ, Dept Phys, Beijing 100191, Peoples R China. |
| 中文摘要 | Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond, there are still many challenges to be solved. Among the various technologies to tackle these probl |
| 学科主题 | Science & Technology - Other Topics |
| 收录类别 | 2012SCI-076 |
| 原文出处 | 10.1007/s11434-012-5289-6 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114790]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang, AP,Zheng, XH,Xiao, ZS,et al. Interface dipole engineering in metal gate/high-k stacks[J]. CHINESE SCIENCE BULLETIN,2012,57(22):2872-2878. |
| APA | Huang, AP,Zheng, XH,Xiao, ZS,Wang, M,Di, ZF,&Chu, PK.(2012).Interface dipole engineering in metal gate/high-k stacks.CHINESE SCIENCE BULLETIN,57(22),2872-2878. |
| MLA | Huang, AP,et al."Interface dipole engineering in metal gate/high-k stacks".CHINESE SCIENCE BULLETIN 57.22(2012):2872-2878. |
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