Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials
文献类型：期刊论文
| 作者 | Rao, F ; Song, ZT ; Cheng, Y ; Xia, MJ ; Ren, K ; Wu, LC ; Liu, B ; Feng, SL |
| 刊名 | ACTA MATERIALIA
 |
| 出版日期 | 2012 |
| 卷号 | 60期号:1页码:323-328 |
| 关键词 | Phase change Band gap Density of localized states |
| ISSN号 | 1359-6454 |
| 通讯作者 | Rao, F (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. |
| 中文摘要 | Upon phase transition, the resistivity changes of Ge2Sb2Te5 (GST) and Si3.5Sb2Te3 (SST) are proved to be closely related to the variations of band gap and density of localized states. Amorphous SST has a slightly more localized state than amorphous GST; h |
| 学科主题 | Materials Science; Metallurgy & Metallurgical Engineering |
| 收录类别 | 2012SCI-264 |
| 原文出处 | 10.1016/j.actamat.2011.09.015 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114791]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Rao, F,Song, ZT,Cheng, Y,et al. Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials[J]. ACTA MATERIALIA,2012,60(1):323-328. |
| APA | Rao, F.,Song, ZT.,Cheng, Y.,Xia, MJ.,Ren, K.,...&Feng, SL.(2012).Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials.ACTA MATERIALIA,60(1),323-328. |
| MLA | Rao, F,et al."Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials".ACTA MATERIALIA 60.1(2012):323-328. |
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