Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications
文献类型：期刊论文
| 作者 | Lu, YG ; Song, SN ; Song, ZT ; Rao, F ; Wu, LC ; Zhu, M ; Liu, B ; Yao, DN |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 100期号:19页码:193114 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Lu, YG (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China. |
| 中文摘要 | The thermal stability of amorphous Sb2Te film can be significantly improved by the addition of Cu. CuSb4Te2 alloy is considered to be a potential candidate for phase change random access memory (PCRAM), as evidenced by a higher crystallization temperature |
| 学科主题 | Physics |
| 收录类别 | 2012SCI-123 |
| 原文出处 | 10.1063/1.4711811 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114792]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lu, YG,Song, SN,Song, ZT,et al. Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications[J]. APPLIED PHYSICS LETTERS,2012,100(19):193114. |
| APA | Lu, YG.,Song, SN.,Song, ZT.,Rao, F.,Wu, LC.,...&Yao, DN.(2012).Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications.APPLIED PHYSICS LETTERS,100(19),193114. |
| MLA | Lu, YG,et al."Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications".APPLIED PHYSICS LETTERS 100.19(2012):193114. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。