中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application

文献类型:期刊论文

作者Wu, LC ; Zhu, M ; Song, ZT ; Lv, SL ; Zhou, XL ; Peng, C ; Rao, F ; Song, SN ; Liu, B ; Feng, SL
刊名JOURNAL OF NON-CRYSTALLINE SOLIDS
出版日期2012
卷号358期号:17页码:2409-2411
关键词Sb-rich Sb65Se6Te29 Phase change Reset
ISSN号0022-3093
通讯作者Wu, LC (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
中文摘要Sb-rich Sb65Se6Te29 film was investigated for phase change random access memory (PCRAM) application. The crystallization temperature of the Sb65Se6Te29 film is 174 degrees C and the crystalline activation energy is about 2.7 eV. The 10-years' failure temp
学科主题Materials Science
收录类别2012SCI-053
原文出处10.1016/j.jnoncrysol.2011.12.087
语种英语
公开日期2013-04-17
源URL[http://ir.sim.ac.cn/handle/331004/114793]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Wu, LC,Zhu, M,Song, ZT,et al. Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS,2012,358(17):2409-2411.
APA Wu, LC.,Zhu, M.,Song, ZT.,Lv, SL.,Zhou, XL.,...&Feng, SL.(2012).Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application.JOURNAL OF NON-CRYSTALLINE SOLIDS,358(17),2409-2411.
MLA Wu, LC,et al."Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application".JOURNAL OF NON-CRYSTALLINE SOLIDS 358.17(2012):2409-2411.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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