中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Measurements of I-V characteristics in InAs/InP quantum dot laser diode

文献类型:期刊论文

作者Li, SG ; Gong, Q ; Cao, CF ; Wang, XZ ; Yue, L ; Wang, HL ; Wang, Y
刊名JOURNAL OF MODERN OPTICS
出版日期2012
卷号59期号:19页码:1695-1699
关键词quantum dot laser diode current-voltage characteristics energy band gap
ISSN号0950-0340
通讯作者Li, SG (reprint author), Shenzhen Inst Informat Technol, Dept Elect Commun Technol, 2188 Longxiang Rd, Shenzhen 518172, Peoples R China.
中文摘要The current-voltage (I-V) characteristics are reported of an InAs/InP quantum dot laser diode operating under the continuous wave mode. The laser diode emits a wavelength of 1.55 mu m at a temperature of 293 K. The maximum operation temperature reaches 34
学科主题Optics
收录类别2012SCI-220
原文出处10.1080/09500340.2012.737480
语种英语
公开日期2013-04-17
源URL[http://ir.sim.ac.cn/handle/331004/114799]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Li, SG,Gong, Q,Cao, CF,et al. Measurements of I-V characteristics in InAs/InP quantum dot laser diode[J]. JOURNAL OF MODERN OPTICS,2012,59(19):1695-1699.
APA Li, SG.,Gong, Q.,Cao, CF.,Wang, XZ.,Yue, L.,...&Wang, Y.(2012).Measurements of I-V characteristics in InAs/InP quantum dot laser diode.JOURNAL OF MODERN OPTICS,59(19),1695-1699.
MLA Li, SG,et al."Measurements of I-V characteristics in InAs/InP quantum dot laser diode".JOURNAL OF MODERN OPTICS 59.19(2012):1695-1699.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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