Multi-State Data Storage of Ge2Sb2Te5/Ga30Sb70 Multilayer Films for Phase Change Memory
文献类型：期刊论文
| 作者 | Sun, MC ; Shen, B ; Wang, CZ ; Song, SN ; Song, ZT ; Zhai, JW |
| 刊名 | ELECTROCHEMICAL AND SOLID STATE LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 15期号:4页码:H115-H117 |
| ISSN号 | 1099-0062 |
| 通讯作者 | Sun, MC (reprint author), Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China. |
| 中文摘要 | The Ge2Sb2Te5/Ga30Sb70 multilayer films with different periods and thickness ratios were prepared by radio-frequency magnetron sputtering system. It was found that three stages with distinct different resistance were achieved during the process of heating |
| 学科主题 | Electrochemistry; Materials Science |
| 收录类别 | 2012SCI-242 |
| 原文出处 | 10.1149/2.028204esl |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114804]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sun, MC,Shen, B,Wang, CZ,et al. Multi-State Data Storage of Ge2Sb2Te5/Ga30Sb70 Multilayer Films for Phase Change Memory[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2012,15(4):H115-H117. |
| APA | Sun, MC,Shen, B,Wang, CZ,Song, SN,Song, ZT,&Zhai, JW.(2012).Multi-State Data Storage of Ge2Sb2Te5/Ga30Sb70 Multilayer Films for Phase Change Memory.ELECTROCHEMICAL AND SOLID STATE LETTERS,15(4),H115-H117. |
| MLA | Sun, MC,et al."Multi-State Data Storage of Ge2Sb2Te5/Ga30Sb70 Multilayer Films for Phase Change Memory".ELECTROCHEMICAL AND SOLID STATE LETTERS 15.4(2012):H115-H117. |
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