N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory
文献类型：期刊论文
| 作者 | Peng, C ; Yang, PX ; Wu, LC ; Song, ZT ; Rao, F ; Xu, JA ; Zhou, XL ; Zhu, M ; Liu, B ; Chu, JH |
| 刊名 | ELECTROCHEMICAL AND SOLID STATE LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 15期号:4页码:H101-H104 |
| ISSN号 | 1099-0062 |
| 通讯作者 | Peng, C (reprint author), E China Normal Univ, Dept Elect, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China. |
| 中文摘要 | Nitrogen incorporated Si0.6Sb2Te3 film shows higher crystallization temperature (similar to 185 degrees C) than Ge2Sb2Te5 (similar to 150 degrees C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si0.6Sb2Te3 material (SST-N). N |
| 学科主题 | Electrochemistry; Materials Science |
| 收录类别 | 2012SCI-241 |
| 原文出处 | 10.1149/2.022204esl |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114805]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng, C,Yang, PX,Wu, LC,et al. N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2012,15(4):H101-H104. |
| APA | Peng, C.,Yang, PX.,Wu, LC.,Song, ZT.,Rao, F.,...&Chu, JH.(2012).N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory.ELECTROCHEMICAL AND SOLID STATE LETTERS,15(4),H101-H104. |
| MLA | Peng, C,et al."N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory".ELECTROCHEMICAL AND SOLID STATE LETTERS 15.4(2012):H101-H104. |
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