Nucleation and growth of single crystal graphene on hexagonal boron nitride
文献类型：期刊论文
| 作者 | Tang, SJ ; Ding, GQ ; Xie, XM ; Chen, J ; Wang, C ; Ding, XL ; Huang, FQ ; Lu, W ; Jiang, MH |
| 刊名 | CARBON
 |
| 出版日期 | 2012 |
| 卷号 | 50期号:1页码:329-331 |
| ISSN号 | 0008-6223 |
| 通讯作者 | Xie, XM (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China. |
| 中文摘要 | Direct graphene growth was demonstrated on exfoliated hexagonal boron nitride (h-BN) single crystal flakes by low pressure CVD. The size of the hexagonal single crystal graphene domain increases with deposition time, with maximum size of similar to 270 nm |
| 学科主题 | Chemistry; Materials Science |
| 收录类别 | 2012SCI-265 |
| 原文出处 | 10.1016/j.carbon.2011.07.062 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114807]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tang, SJ,Ding, GQ,Xie, XM,et al. Nucleation and growth of single crystal graphene on hexagonal boron nitride[J]. CARBON,2012,50(1):329-331. |
| APA | Tang, SJ.,Ding, GQ.,Xie, XM.,Chen, J.,Wang, C.,...&Jiang, MH.(2012).Nucleation and growth of single crystal graphene on hexagonal boron nitride.CARBON,50(1),329-331. |
| MLA | Tang, SJ,et al."Nucleation and growth of single crystal graphene on hexagonal boron nitride".CARBON 50.1(2012):329-331. |
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