Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Li, SG ; Gong, Q ; Cao, CF ; Wang, XZ ; Yue, L ; Liu, QB ; Wang, HL ; Wang, Y |
| 刊名 | INFRARED PHYSICS & TECHNOLOGY
 |
| 出版日期 | 2012 |
| 卷号 | 55期号:41308页码:205-209 |
| 关键词 | PL spectrum InAs/InP quantum dot GSMBE Growth temperature |
| ISSN号 | 1350-4495 |
| 通讯作者 | Li, SG (reprint author), Shenzhen Inst Informat Technol, Dept Elect Commun & Technol, 2188 Longxiang Rd, Shenzhen 518172, Peoples R China. |
| 中文摘要 | We report on the optical characteristics of InAs quantum dots based on the InP(1 0 0) substrate grown by gas source molecular beam epitaxy without assisting any other methods. The photoluminescence was carefully investigated by adjusting the thickness of |
| 学科主题 | Instruments & Instrumentation; Optics; Physics |
| 收录类别 | 2012SCI-166 |
| 原文出处 | 10.1016/j.infrared.2012.01.004 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114808]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, SG,Gong, Q,Cao, CF,et al. Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy[J]. INFRARED PHYSICS & TECHNOLOGY,2012,55(41308):205-209. |
| APA | Li, SG.,Gong, Q.,Cao, CF.,Wang, XZ.,Yue, L.,...&Wang, Y.(2012).Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy.INFRARED PHYSICS & TECHNOLOGY,55(41308),205-209. |
| MLA | Li, SG,et al."Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy".INFRARED PHYSICS & TECHNOLOGY 55.41308(2012):205-209. |
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