Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment
文献类型：期刊论文
| 作者 | Xu, DW ; Cheng, XH ; Zhang, YW ; Wang, ZJ ; Xia, C ; Cao, D ; Yu, YH ; Shen, DS |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2012 |
| 卷号 | 93页码:15-18 |
| 关键词 | PEALD HfO2 Plasma treatment High-k |
| ISSN号 | 0167-9317 |
| 通讯作者 | Xu, DW (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Changning Rd 865, Shanghai 200050, Peoples R China. |
| 中文摘要 | Plasma-enhanced atomic layer deposition was explored to produce thin HfO2 films, where oxygen plasma acted as oxidant. The interfacial layer (IL) was controlled by in situ pre-oxygen plasma treatment (PRO) and pre-ammonia plasma treatment (PRN). Post oxyg |
| 学科主题 | Engineering; Science & Technology - Other Topics; Optics; Physics |
| 收录类别 | 2012SCI-133 |
| 原文出处 | 10.1016/j.mee.2011.11.017 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114814]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, DW,Cheng, XH,Zhang, YW,et al. Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment[J]. MICROELECTRONIC ENGINEERING,2012,93:15-18. |
| APA | Xu, DW.,Cheng, XH.,Zhang, YW.,Wang, ZJ.,Xia, C.,...&Shen, DS.(2012).Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment.MICROELECTRONIC ENGINEERING,93,15-18. |
| MLA | Xu, DW,et al."Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment".MICROELECTRONIC ENGINEERING 93(2012):15-18. |
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