Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films
文献类型：期刊论文
| 作者 | Jayasinghe, RC ; Lao, YF ; Perera, AGU ; Hammar, M ; Cao, CF ; Wu, HZ |
| 刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| 出版日期 | 2012 |
| 卷号 | 24期号:43页码:435803 |
| ISSN号 | 0953-8984 |
| 通讯作者 | Jayasinghe, RC (reprint author), Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA. |
| 中文摘要 | The optical properties of p-type InP epitaxial films with different doping concentrations are investigated by infrared absorption measurements accompanied by reflection and transmission spectra taken from 25 to 300 K. A complete dielectric function (DF) m |
| 学科主题 | Physics |
| 收录类别 | 2012SCI-025 |
| 原文出处 | 10.1088/0953-8984/24/43/435803 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114815]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jayasinghe, RC,Lao, YF,Perera, AGU,et al. Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2012,24(43):435803. |
| APA | Jayasinghe, RC,Lao, YF,Perera, AGU,Hammar, M,Cao, CF,&Wu, HZ.(2012).Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films.JOURNAL OF PHYSICS-CONDENSED MATTER,24(43),435803. |
| MLA | Jayasinghe, RC,et al."Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films".JOURNAL OF PHYSICS-CONDENSED MATTER 24.43(2012):435803. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。